The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Oct. 20, 2016
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

Philip H. Bowles, Gilbert, AZ (US);

Stephen R. Hooper, Mesa, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/02 (2006.01);
U.S. Cl.
CPC ...
B81B 7/02 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2207/07 (2013.01); B81B 2207/09 (2013.01);
Abstract

Microelectronic packages and methods for producing microelectronic packages are provided. In one embodiment, the method includes bonding a first Microelectromechanical Systems (MEMS) die having a first MEMS transducer structure thereon to a cap piece. The first MEMS die and cap piece are bonded such that a first hermetically-sealed cavity is formed enclosing the first MEMS transducer. A second MEMS die having a second MEMS transducer structure thereon is further bonded to one of the cap piece and the second MEMS die. The second MEMS die and the cap piece are bonded such that a second hermetically-sealed cavity is formed enclosing the second MEMS transducer. The second hermetically-sealed cavity contains a different internal pressure than does the first hermetically-sealed cavity.


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