logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10050035 B1

PDFFull Text
Date of Patent:
Aug. 14, 2018

Filed:

Jan. 17, 2014

Method of making protective layer over polysilicon structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Shao Cheng, Taipei, TW;

Shin-Yeu Tsai, Zhubei, TW;

Chui-Ya Peng, Hsinchu, TW;

Kung-Wei Lee, New Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Tom Thomas

Assistant Examiner:

John Bodnar

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 27/06 (2006.01); H01L 27/11 (2006.01); H01L 27/112 (2006.01); H01L 29/78 (2006.01); H01L 21/8222 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/28247 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/32051 (2013.01); H01L 21/32055 (2013.01); H01L 21/8222 (2013.01); H01L 21/8238 (2013.01); H01L 21/82385 (2013.01); H01L 21/823864 (2013.01); H01L 27/0623 (2013.01); H01L 27/11 (2013.01); H01L 29/6653 (2013.01); H01L 29/66234 (2013.01); H01L 29/66674 (2013.01); H01L 29/7801 (2013.01); H01L 27/11206 (2013.01);
Abstract

A method includes forming a first polysilicon structure over a first portion of a substrate. A second polysilicon structure is formed over a second portion of the substrate. Two spacers are formed on opposite sidewalls of the second polysilicon structure. A layer of protective material is formed to cover the first and second portions of the substrate. The layer of protective material has a first thickness over the second polysilicon structure and a second thickness over the two spacers. The first thickness is equal to or greater than 500 Å, and the second thickness is equal to or less than 110% of the first thickness. A patterned photo resist layer is formed to cover a first portion of the layer of protective material that covers the first portion of the substrate. The second portion of the layer of protective material is removed.

Find Patent Forward Citations

Loading…