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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10050030 B1

PDFFull Text
Date of Patent:
Aug. 14, 2018

Filed:

Jan. 07, 2016

Semiconductor device and fabricating method thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-Chien Huang, Hsinchu, TW;

Chi-Wen Liu, Hsinchu, TW;

Horng-Huei Tseng, Hsinchu, TW;

Tsung-Yu Chiang, New Taipei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Hoang-Quan Ho

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 23/528 (2013.01); H01L 28/24 (2013.01); H01L 29/0611 (2013.01); H01L 29/0653 (2013.01); H01L 29/42364 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01);
Abstract

A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.

Find Patent Forward Citations

Huang, Cheng-Chien. (2018). Semiconductor device and fabricating method thereof (U.S. Patent No. 10050030). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10050030

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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