The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Sep. 11, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Chi Chuang, New Taipei, TW;
Hsuan-Hui Hung, Changhua County, TW;
Kun-Ming Huang, Taipei, TW;
Ming-Yi Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 51/52 (2006.01); H01L 23/532 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 21/0217 (2013.01); H01L 21/02118 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/31 (2013.01); H01L 23/3192 (2013.01); H01L 23/53295 (2013.01); H01L 31/1868 (2013.01); H01L 51/5253 (2013.01); H01L 51/5256 (2013.01); H01L 51/5259 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A passivation structure includes a bottom dielectric layer. The passivation structure further includes a doped dielectric layer over the bottom dielectric layer. The doped dielectric layer includes a first doped layer and a second doped layer. The passivation structure further includes a top dielectric layer over the doped dielectric layer.