The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Sep. 30, 2015
Shin-etsu Chemical Co., Ltd., Chiyoda-ku, Tokyo, JP;
Shigeru Konishi, Annaka, JP;
Makoto Kawai, Annaka, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A method for manufacturing a bonded substrate is provided, the bonded substrate including a single-crystal semiconductor substrate on a sintered-body substrate that has small warpage after bonding, has good thermal conductivity and small loss at high-frequency region and is suitable for high-frequency devices. Specifically, the method at least includes: applying coating to all of the faces of a sintered-body substrate, so as to obtain a support substrate including at least one layer of amorphous film; and bonding the support substrate and a single-crystal semiconductor substrate via the amorphous film. On a surface of the amorphous film on the support substrate to be bonded with the single-crystal semiconductor substrate, concentration of each of Al, Fe and Ca by ICP-MS method is less than 5.0×10atoms/cm, and surface roughness Rms of the surface of the amorphous film is 0.2 nm or less.