The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Aug. 07, 2014
Qualcomm Incorporated, San Diego, CA (US);
Wei-Chuan Chen, Taipei, TW;
Xiaochun Zhu, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Yu Lu, San Diego, CA (US);
Chando Park, San Diego, CA (US);
Seung Hyuk Kang, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer.