The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Jun. 13, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chia-Ying Li, Hsinchu, TW;
Ming-Shiou Kuo, Taichung, TW;
Wei-Ching Wu, New Taipei, TW;
Zong-Han Li, Hsinchu, TW;
Ching-Lun Lai, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02271 (2013.01); H01L 21/02348 (2013.01); H01L 21/02694 (2013.01); H01L 21/823821 (2013.01);
Abstract
A method for manufacturing a semiconductor device is provided, including forming a fin field effect transistor (FinFET) structure on a semiconductor substrate. The FinFET structure includes at least one fin, and a gate electrode structure and source/drain regions on the at least one fin. A dielectric film is formed over the at least on fin. The dielectric film is irradiated with ultra violet (UV) radiation from a single UV source.