The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Jun. 26, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Yi-Ching Chang, Pingtung County, TW;
Feng-Yi Chang, Tainan, TW;
Fu-Che Lee, Taichung, TW;
Chieh-Te Chen, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a cell region and a peripheral region; forming a bit line structure on the cell region and a gate structure on the peripheral region; forming an interlayer dielectric (ILD) layer around the bit line structure and the gate structure; forming a conductive layer on the bit line structure; performing a first photo-etching process to remove part of the conductive layer for forming storage contacts adjacent two sides of the bit line structure and contact plugs adjacent to two sides of the gate structure; forming a first cap layer on the cell region and the peripheral region to cover the bit line structure and the gate structure; and performing a second photo-etching process to remove part of the first cap layer on the cell region.