The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Feb. 06, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ranga Rao Arnepalli, Krishna, IN;

Prerna Sonthalia Goradia, Mumbai, IN;

Robert Jan Visser, Menlo Park, CA (US);

Nitin Ingle, San Jose, CA (US);

Mikhail Korolik, San Jose, CA (US);

Jayeeta Biswas, West Bengal, IN;

Saurabh Lodha, Maharashtra, IN;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01L 21/02244 (2013.01); H01L 21/31122 (2013.01);
Abstract

Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.


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