The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Oct. 19, 2016
Applicants:
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Dow Global Technologies Llc, Midland, MI (US);
Inventors:
Huaxing Zhou, Furlong, PA (US);
Vipul Jain, North Grafton, MA (US);
Jin Wuk Sung, Northborough, MA (US);
Peter Trefonas, III, Medway, MA (US);
Phillip D. Hustad, Pearland, TX (US);
Mingqi Li, Shrewsbury, MA (US);
Assignees:
Dow Global Technologies LLC, Midland, MI (US);
Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/038 (2006.01); C09D 183/10 (2006.01); G03F 7/40 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); C08L 53/00 (2006.01); C09D 153/00 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); C08F 293/00 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/038 (2013.01); C08F 293/00 (2013.01); C08F 293/005 (2013.01); C08L 53/00 (2013.01); C09D 153/00 (2013.01); C09D 183/10 (2013.01); G03F 7/0045 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/165 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0149 (2013.01); C08F 2438/03 (2013.01);
Abstract
Block copolymers comprise a first block comprising an alternating copolymer, and a second block comprising a unit comprising a hydrogen acceptor. The block copolymers find particular use in pattern shrink compositions and methods in semiconductor device manufacture for the provision of high resolution patterns.