The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2018

Filed:

May. 05, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yen-Hsung Ho, Taoyuan County, TW;

Chia-Yi Tseng, Tainan, TW;

Chih-Hsun Lin, Tainan, TW;

Kun-Tsang Chuang, Miaoli County, TW;

Yung-Lung Hsu, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); H01L 21/76807 (2013.01); H01L 22/14 (2013.01);
Abstract

A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first and second features are electrically isolated from each other; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.


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