The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Feb. 16, 2017
Infineon Technologies Ag, Neubiberg, DE;
Michael Brugger, Lieserbruecke, AT;
Moriz Jelinek, Villach, AT;
Johannes Georg Laven, Taufkirchen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the test implantation are implanted with a first implantation angle range over the semiconductor substrate. Further, the method includes determining an implantation angle offset based on the semiconductor substrate after the test implantation and adjusting a tilt angle of the semiconductor substrate with respect to an implantation direction based on the determined implantation angle offset. Additionally, the method includes performing at least one target implantation of ions into the semiconductor substrate after the adjustment of the tilt angle. The ions of the at least one target implantation are implanted with a second implantation angle range over the semiconductor substrate. Further, the first implantation angle range is larger than the second implantation angle range.