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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10032980 B1

PDFFull Text
Date of Patent:
Jul. 24, 2018

Filed:

Feb. 27, 2017

Integrated circuits with magnetic tunnel junctions and methods for producing the same

Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Seungmo Noh, Singapore, SG;

Kazutaka Yamane, Singapore, SG;

Kangho Lee, Singapore, SG;

Assignee:

GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;

Attorney:

Lorenz & Kopf, LLP

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01F 10/14 (2006.01); H01F 10/16 (2006.01); H01F 10/32 (2006.01); H01F 41/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01F 10/145 (2013.01); H01F 10/16 (2013.01); H01F 10/3213 (2013.01); H01F 41/32 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure. The total free structure includes a first free layer, a second free layer, and a first spacer layer disposed between the first and second free layers. The first spacer layer is non-magnetic. At least one of the first or second free layers include a primary free layer alloy with cobalt, iron, boron, and a free layer additional element. The free layer additional element is present at from about 1 to about 10 atomic percent. The free layer additional element is selected from one or more of molybdenum, aluminum, germanium, tungsten, vanadium, niobium, tantalum, zirconium, manganese, titanium, chromium, silicon, and hafnium.

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