The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Mar. 13, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Sheng-Wen Chen, Tainan, TW;
Shih Yu-Shen, Hemei Township, TW;
Chia Ping Lo, Jhubei, TW;
Yan-Hua Lin, Tainan, TW;
Lun-Kuang Tan, Hsinchu, TW;
Yu-Ting Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be a cold implantation process.