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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10026693 B1

PDFFull Text
Date of Patent:
Jul. 17, 2018

Filed:

May. 08, 2017

Method, apparatus, and system for mol interconnects without titanium liner

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Vimal Kamineni, Albany, NY (US);

Mark V. Raymond, Albany, NY (US);

Praneet Adusumilli, Albany, NY (US);

Chengyu Niu, Albany, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Williams Morgan, P.C.

Primary Examiner:

Christine Enad

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 23/532 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/28518 (2013.01); H01L 21/31116 (2013.01); H01L 21/67207 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 29/45 (2013.01); H01L 29/78 (2013.01);
Abstract

Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein the ILD comprises a trench and a bottom of the trench comprises at least a portion of the top of the first metal component; a barrier material disposed on sidewalls and the bottom of the trench; and a second metal component disposed in the trench.

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