The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Jul. 13, 2017
Applicant:

Canon Anelva Corporation, Asao-ku, Kawasaki-shi, Kanagawa, JP;

Inventors:

Yoshimitsu Kodaira, Kawasaki, JP;

Yukito Nakagawa, Kawasaki, JP;

Motozo Kurita, Kawasaki, JP;

Assignee:

Canon Anelva Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01J 37/32 (2006.01); H01L 21/66 (2006.01); H01L 21/321 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/3266 (2013.01); H01J 37/32339 (2013.01); H01J 37/32422 (2013.01); H01J 37/32715 (2013.01); H01L 21/31055 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 21/32136 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01J 2237/334 (2013.01);
Abstract

An ion beam etching device includes a grid provided between a treatment chamber and a plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber; a gas introduction unit for introducing discharge gas into the plasma generation chamber; an exhaust for exhausting the treatment chamber; a substrate holder; a control unit to receive a measurement result of an in-plane film thickness distribution before the substrate is processed; and an electromagnetic coil provided outside of the plasma generation chamber in a ceiling portion opposite to the grid of the plasma generation chamber. The electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, and the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result.


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