The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Jun. 29, 2017
Lam Research Corporation, Fremont, CA (US);
Yansha Jin, Fremont, CA (US);
Zhongkui Tan, San Jose, CA (US);
Lin Cui, Dublin, CA (US);
Qian Fu, Pleasanton, CA (US);
Martin Shim, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for processing a stack with an etch layer below a mask is provided. The mask is treated by flowing a treatment gas, wherein the treatment gas comprises a sputtering gas and a trimming gas, providing pulsed TCP power to create a plasma from the treatment gas, and providing a pulsed bias, wherein the pulsed bias has a same period as the pulsed TCP power, wherein the pulsed TCP power and pulsed bias provide a first state with a first bias above a sputter threshold and a first TCP power, which causes species from the sputtering gas to sputter and redeposit material from the mask, and provide a second state with a second bias below the sputter threshold and a second TCP power, wherein the second TCP power is greater than the first TCP power, which causes species from the trimming gas to chemically trim the mask.