The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Jan. 24, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Yen Tseng, Tainan, TW;
Ching-Cheng Lung, Tainan, TW;
Yu-Tse Kuo, Tainan, TW;
Chun-Hsien Huang, Tainan, TW;
Chih-Wei Tsai, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a six transistor static random-access memory (6T-SRAM) cell, the 6T-SRAM cell includes a first inverter comprising a first pull-up transistor and a first pull-down transistor, and a first storage node, a second inverter comprising a second pull-up transistor, a second pull-down transistor, and a second storage node, wherein the first storage node is coupled to gates of the second pull-up transistor and the second pull-down transistor, a switch transistor configured to couple the second storage node to gates of the first pull-up transistor and the first pull-down transistor, and an access transistor coupled to gates of the first pull-up transistor and the first pull-down transistor.