The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Jun. 07, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Toshio Nakanishi, Nirasaki, JP;
Daisuke Katayama, Boise, ID (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 29/51 (2006.01); H01L 21/475 (2006.01); C23C 16/34 (2006.01); C23C 16/46 (2006.01); C23C 16/511 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
C23C 16/345 (2013.01); C23C 16/46 (2013.01); C23C 16/511 (2013.01); C23C 16/56 (2013.01); H01L 21/31 (2013.01); H01L 21/475 (2013.01); H01L 29/518 (2013.01);
Abstract
A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.