The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Mar. 01, 2017
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Joel P. de Souza, Putnam Valley, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Alexander Reznicek, Troy, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure is provided that contains silicon fins having different heights, while maintaining a reasonable fin height to width ratio for process feasibility. The semiconductor structure includes a first silicon fin of a first height and located on a pedestal portion of a first oxide structure. The structure further includes a second silicon fin of a second height and located on a pedestal portion of a second oxide structure. The first oxide structure and the second oxide structure are interconnected and the second oxide structure has a bottommost surface that is located beneath a bottommost surface of the first oxide structure. Further, the second height of the second silicon fin is greater than the first height of the first silicon fin, yet a topmost surface of the first silicon fin is coplanar with a topmost surface of the second silicon fin.