The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jan. 06, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jia-Rui Lee, Kaohsiung, TW;
Kuo-Ming Wu, Hsinchu, TW;
Yi-Chun Lin, Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device of a circuit is provided. The circuit is configured to be operated under a power supply. The semiconductor device of the circuit includes a first transistor and a second transistor. The first transistor includes a first source region in a first bulk region; a first drain region defined by a well and a doped region, wherein the first source region and the doped region are separate by a distance, which is a factor which determines a breakdown voltage of the first transistor, the breakdown voltage being associated with the power supply; and a first gate. The second transistor includes a second source region in a second bulk region, the second source region electrically connected with the first source region and the first gate.