The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Feb. 06, 2013
Kong-beng Thei, Pao-Shan Village, TW;
Jiun-lei Jerry Yu, Zhudong Township, TW;
Chun Lin Tsai, Hsinchu, TW;
Hsiao-chin Tuan, Jhudong County, TW;
Alex Kalnitsky, San Francisco, CA (US);
Kong-Beng Thei, Pao-Shan Village, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Chun Lin Tsai, Hsinchu, TW;
Hsiao-Chin Tuan, Jhudong County, TW;
Alex Kalnitsky, San Francisco, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A silicon substrate with a GaN-based device and a Si-based device on the silicon substrate is provided. The silicon substrate includes the GaN-based device on a SiC crystalline region. The SiC crystalline region is formed in the silicon substrate. The silicon substrate also includes the Si-based device on a silicon region, and the silicon region is next to the SiC crystalline region on the silicon substrate.