The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

Feb. 20, 2015
Applicant:

Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;

Inventors:

Naohide Takamoto, Ibaraki, JP;

Hiroyuki Hanazono, Ibaraki, JP;

Akihiro Fukui, Ibaraki, JP;

Assignee:

NITTO DENKO CORPORATION, Ibaraki-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 25/065 (2006.01); C09J 7/00 (2018.01); H01L 25/00 (2006.01); C09J 7/24 (2018.01); C08L 63/00 (2006.01); C08L 101/12 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/29 (2013.01); C09J 7/24 (2018.01); H01L 21/563 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 23/293 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); C09J 2203/326 (2013.01); C09J 2433/006 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68336 (2013.01); H01L 2221/68377 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/271 (2013.01); H01L 2224/27002 (2013.01); H01L 2224/27003 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/293 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29291 (2013.01); H01L 2224/29311 (2013.01); H01L 2224/29316 (2013.01); H01L 2224/29318 (2013.01); H01L 2224/29324 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29344 (2013.01); H01L 2224/29347 (2013.01); H01L 2224/29355 (2013.01); H01L 2224/29364 (2013.01); H01L 2224/29371 (2013.01); H01L 2224/29387 (2013.01); H01L 2224/29393 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32227 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81127 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81204 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81907 (2013.01); H01L 2224/83127 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83204 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/83907 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/0635 (2013.01); H01L 2924/3512 (2013.01);
Abstract

An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt−Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from −50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from −50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.


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