The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Sep. 08, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chih-Kai Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Yu-Hsiang Hung, Tainan, TW;
Wei-Chi Cheng, Kaohsiung, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 29/42356 (2013.01); H01L 29/42368 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/78 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a gate structure is formed on the substrate, a recess is formed adjacent to the gate structure, a buffer layer is formed in the recess, and an epitaxial layer is formed on the buffer layer. Preferably, the buffer layer includes a crescent moon shape.