The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Oct. 02, 2015
Applicant:

American Air Liquide, Inc., Fremont, CA (US);

Inventors:

Guillaume Husson, Wilmington, DE (US);

Glenn Kuchenbeiser, Newark, DE (US);

Venkateswara R. Pallem, Hockessin, DE (US);

Assignee:

American Air Liquide, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/448 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/347 (2013.01); C23C 16/401 (2013.01); C23C 16/4482 (2013.01);
Abstract

Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR)-E)SiH—SiH(E-(CR)-E), wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR)-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.


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