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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10002930 B1

PDFFull Text
Date of Patent:
Jun. 19, 2018

Filed:

Nov. 30, 2016

Forming a contact layer on a semiconductor body

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Roland Rupp, Lauf, DE;

Jens Peter Konrath, Villach, AT;

Francisco Javier Santos Rodriguez, Villach, AT;

Carsten Schaeffer, Annenheim, AT;

Hans-Joachim Schulze, Taufkirchen, DE;

Werner Schustereder, Villach, AT;

Guenther Wellenzohn, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Robert Bachner

Assistant Examiner:

Molly Reida

Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/225 (2006.01); H01L 29/47 (2006.01); H01L 29/16 (2006.01); H01L 21/285 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/02697 (2013.01); H01L 21/0485 (2013.01); H01L 21/0495 (2013.01); H01L 21/2258 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/452 (2013.01); H01L 29/47 (2013.01); H01L 21/046 (2013.01); H01L 21/28575 (2013.01); H01L 29/20 (2013.01);
Abstract

Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer into the semiconductor body and form a metal atom containing region in the semiconductor body; and annealing the semiconductor body. The annealing includes heating at least the metal atom containing region to a temperature of less than 500° C.

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