The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Apr. 07, 2016
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Wei Jiang, Hsinchu, TW;
Jia-Rong Chiou, Zhubei, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11568 (2017.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/10 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5226 (2013.01); H01L 23/53257 (2013.01); H01L 27/11568 (2013.01); H01L 29/04 (2013.01); H01L 29/1037 (2013.01); H01L 29/16 (2013.01);
Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of first stacked structures and two second stacked structures disposed on the substrate. Each of the first stacked structures includes alternately stacked metal layers and oxide layers. Each of the second stacked structures includes alternately stacked silicon nitride layers and oxide layers. The first stacked structures are disposed between the two second stacked structures.