Shanghai, China

Zuoya Yang


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2013-2016

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2 patents (USPTO):Explore Patents

Title: Zuoya Yang: Innovator in Semiconductor Technologies

Introduction

Zuoya Yang is a distinguished inventor based in Shanghai, China, recognized for his significant contributions to the field of semiconductor technologies. With a total of two patents to his name, Yang focuses on methods that enhance the performance and reliability of semiconductor devices.

Latest Patents

Yang’s latest innovations include:

1. **Method of preventing auto-doping during epitaxial layer growth by cleaning the reaction chamber with hydrogen chloride**: This innovative technique begins by removing impurities from the semiconductor substrate and the reaction chamber. The cleaned substrate is pre-baked under vacuum conditions, fostering the extraction of dopant atoms. A first intrinsic epitaxial layer is then formed under high temperature and low gas flow conditions, followed by the creation of a second epitaxial layer of required thickness. This method effectively prevents the auto-doping effect during growth and ensures the reliability of devices in the peripheral circuit region.

2. **Method of fabricating dual trench isolated epitaxial diode array**: This invention outlines a comprehensive approach for fabricating a dual trench isolated epitaxial diode array. It entails the formation of heavily-doped first and second conductivity type regions on a substrate, followed by epitaxial growth. The method includes deep trench etch to create isolations between diode array word lines and shallow trench etch for isolating bit lines. This innovation not only prevents crosstalk currents but is also compatible with conventional CMOS processes, effectively addressing the challenges in high-density, large-capacity memory fabrication.

Career Highlights

Zuoya Yang is currently affiliated with the Shanghai Institute of Microsystem and Information Technology, which is part of the Chinese Academy of Sciences. His research and inventions have contributed to advancements in semiconductor technology, particularly in improving memory device performance.

Collaborations

Throughout his career, Yang has collaborated with esteemed colleagues, including Chao B Zhang and Zhitang Song. Their combined expertise has further propelled innovation within their field, facilitating the development of groundbreaking semiconductor solutions.

Conclusion

As an accomplished inventor, Zuoya Yang continues to make strides in semiconductor technologies. His patents not only address current technological challenges but also pave the way for future advancements in high-density memory solutions, solidifying his impact on the industry.

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