Zimri C Putney

Title: Zimri C Putney: Innovator in Transistor Technology

Introduction

Zimri C Putney is a notable inventor based in Fairfax Station, VA (US). He has made significant contributions to the field of transistor technology, holding 2 patents that focus on optimizing the characteristics of integrated circuits.

Latest Patents

Putney's latest patents include a structure and process for optimizing the characteristics of I²L. This innovation reduces minority carrier charge storage, increases emitter injection efficiency, and minimizes emitter diffusion capacitance in upward injecting vertical NPN transistors. Additionally, it enhances collector efficiency in lateral PNP transistors. The process involves ion-implanting a p-type region in the epitaxial layer, which aids in the movement of minority carrier charges while reducing their tendency to remain in the epitaxial layer. Another patent details an improved NPN/PNP fabrication process with enhanced alignment, allowing for the formation of micron to sub-micron window size devices. This method streamlines the creation of contact and guard ring windows, resulting in reduced capacitance and improved device performance.

Career Highlights

Zimri C Putney is currently employed at International Business Machines Corporation (IBM). His work at IBM has positioned him as a key player in the development of advanced transistor technologies.

Collaborations

Throughout his career, Putney has collaborated with notable colleagues, including David L Bergeron and Geoffrey B Stephens. These collaborations have contributed to the advancement of his innovative projects.

Conclusion

Zimri C Putney's contributions to transistor technology through his patents and work at IBM highlight his role as a significant inventor in the field. His innovations continue to influence the development of integrated circuits and semiconductor devices.