Company Filing History:
Years Active: 2017-2021
Title: Innovations of Zilong Bai in Ferroelectric Memory Technology
Introduction
Zilong Bai is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of ferroelectric memory technology. With a total of 2 patents, his work focuses on enhancing memory storage solutions through innovative methods and integrated circuits.
Latest Patents
Zilong Bai's latest patents include groundbreaking technologies in ferroelectric memory. The first patent is for a "Ferroelectric memory IC as well as method of operating the same and method of preparing the same." This invention discloses an integrated circuit for ferroelectric memory, which comprises a ferroelectric memory array formed on a ferroelectric single-crystal layer. Each memory unit in the array is designed to enhance the efficiency and performance of memory storage.
The second patent is for a "Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same." This invention allows for non-destructive readout through current, making it suitable for high-density applications. The preparation method is simple and cost-effective, which adds to its appeal in the industry.
Career Highlights
Zilong Bai is affiliated with Fudan University, where he continues to advance research in ferroelectric memory technologies. His work has positioned him as a key figure in the development of innovative memory solutions.
Collaborations
Zilong Bai collaborates with notable colleagues such as Anquan Jiang and Jun Jiang. Their combined expertise contributes to the advancement of research and development in the field of ferroelectric memory.
Conclusion
Zilong Bai's contributions to ferroelectric memory technology demonstrate his innovative spirit and commitment to advancing memory storage solutions. His patents reflect a deep understanding of the complexities involved in memory technology, paving the way for future advancements in the field.