Company Filing History:
Years Active: 2022-2023
Title: Ziaur Rahaman Shakh: Innovator in Magnetic Memory Structures
Introduction
Ziaur Rahaman Shakh is a prominent inventor based in Zhudong, Taiwan. He has made significant contributions to the field of magnetic memory structures, holding 2 patents that showcase his innovative approach to technology. His work is primarily associated with the Industrial Technology Research Institute, where he continues to push the boundaries of research and development.
Latest Patents
Shakh's latest patents focus on advanced magnetic memory structures. One of his notable inventions includes a magnetic memory structure that comprises a heavy-metal layer, multiple magnetic tunneling junction (MTJ) layers, a conductive layer, and an insulation layer. In this design, the pinned-layer of the MTJ layers is arranged in a string form over the barrier-layer. Additionally, the conductive layer is strategically formed under the heavy-metal layer, enhancing the overall electric conductivity of the structure. Another patent also emphasizes a magnetic memory structure that integrates a magnetic tunneling junction (MTJ) layer with a heavy-metal layer, showcasing the innovative arrangement of pinned-layers and barrier-layers to optimize performance.
Career Highlights
Throughout his career, Ziaur Rahaman Shakh has demonstrated a commitment to advancing technology in the field of magnetic memory. His work at the Industrial Technology Research Institute has positioned him as a key figure in research and development, contributing to the evolution of memory structures that are crucial for modern electronics.
Collaborations
Shakh has collaborated with esteemed colleagues such as I-Jung Wang and Jeng-Hua Wei, further enhancing the impact of his research through teamwork and shared expertise.
Conclusion
Ziaur Rahaman Shakh's contributions to magnetic memory structures reflect his innovative spirit and dedication to technological advancement. His patents not only highlight his expertise but also pave the way for future developments in the field.