Company Filing History:
Years Active: 2021
Title: Zhuobo Yang: Innovator in GaN-based LED Technology
Introduction
Zhuobo Yang is a prominent inventor based in Guangdong, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of efficient wide bandgap GaN-based LED chips. His innovative work has the potential to enhance the performance and efficiency of LED lighting systems.
Latest Patents
Zhuobo Yang holds a patent for an "Efficient wide bandgap GaN-based LED chip based on surface plasmon effect and manufacturing method therefor." This invention features a flip-chip structure that includes a substrate, buffer layer, unintentionally doped GaN layer, n-GaN layer, quantum well layer, electron blocking layer, p-GaN layer, metallic reflecting mirror layer, passivation layer, p-electrode layer, and n-electrode layer. Notably, the design incorporates a micro-nano composite metal structure that enhances the chip's efficiency.
Career Highlights
Zhuobo Yang is affiliated with the South China University of Technology, where he continues to advance research in semiconductor technologies. His work has garnered attention for its innovative approach to LED chip design, contributing to the broader field of optoelectronics.
Collaborations
Zhuobo Yang has collaborated with notable colleagues, including Huamao Huang and Hong Yang Wang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of semiconductor research.
Conclusion
Zhuobo Yang's contributions to GaN-based LED technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and ongoing research continue to pave the way for advancements in efficient lighting solutions.