Zhouchangwan Yu

Title: Zhouchangwan Yu: Innovator in Ferroelectric Materials

Introduction

Zhouchangwan Yu is a prominent inventor based in Stanford, CA (US). He has made significant contributions to the field of ferroelectric materials, particularly through his innovative patent related to cerium-doped ferroelectric materials.

Latest Patents

Zhouchangwan Yu holds a patent for "Cerium-doped ferroelectric materials and related devices and methods." This patent discloses ferroelectric materials, specifically cerium-doped ferroelectric materials, and outlines methods for their application. The invention focuses on ferroelectric layers of hafnium-zirconium-oxide (HZO) doped with cerium, which enhances the reliability of ferroelectric fabrication processes. The resulting structures exhibit significantly improved cycling endurance performance. The patent also discusses the modulation of polarization to achieve desired operation voltage ranges, with specific doping concentrations of cerium in HZO films that stabilize the polar orthorhombic phase, thereby promoting ferroelectric capabilities. Additionally, exemplary fabrication techniques and device structures, including metal-ferroelectric-metal (MFM) and metal-ferroelectric-insulator-semiconductor (MFIS) structures, are disclosed.

Career Highlights

Zhouchangwan Yu is affiliated with Leland Stanford Junior University, where he continues to advance research in ferroelectric materials. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

He has collaborated with notable colleagues, including Paul C McIntyre and Wilman Tsai, contributing to the advancement of research in his field.

Conclusion

Zhouchangwan Yu's innovative work in cerium-doped ferroelectric materials showcases his commitment to enhancing the performance and reliability of electronic devices. His contributions are paving the way for future advancements in ferroelectric technology.