Zhonghao Sun

Title: Innovations of Zhonghao Sun in High-Electron-Mobility Transistors

Introduction

Zhonghao Sun is a prominent inventor based in Dalian, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-electron-mobility transistors (HEMTs). His innovative work has garnered attention for its potential applications in various electronic devices.

Latest Patents

Zhonghao Sun holds a patent for a "High-threshold-voltage normally-off high-electron-mobility transistor and preparation method therefor." This invention features a high-threshold-voltage normally-off HEMT that includes a nucleation layer and an epitaxial layer grown sequentially on a substrate. The design incorporates a barrier layer, a source, and a drain above the epitaxial layer, forming a heterojunction structure. The contact interface between the barrier layer and the epitaxial layer is induced by polarization charges, generating a two-dimensional electron gas. Additionally, the HEMT includes a passivation layer above the barrier layer and a gate cap layer above the gate region barrier layer. The upper part of the gate cap layer undergoes surface plasma oxidation to form an oxide dielectric layer, or a single-layer or multiple gate dielectric insertion layer is directly deposited. The gate is positioned above the gate dielectric insertion layer and is in contact with the passivation layer, while a field plate extends from the gate to the drain on the passivation layer.

Career Highlights

Zhonghao Sun is affiliated with Dalian University of Technology, where he continues to advance research in semiconductor technologies. His work has not only contributed to academic knowledge but also has practical implications for the electronics industry.

Collaborations

Zhonghao Sun collaborates with Huolin Huang, a fellow researcher, to further explore advancements in HEMT technology and its applications.

Conclusion

Zhonghao Sun's innovative contributions to high-electron-mobility transistors exemplify the importance of research in semiconductor technology. His patent reflects a significant advancement that could influence future electronic device designs.