Ze Xu

Title: Ze Xu - Innovator in Silicon Wafer Technology

Introduction

Ze Xu is a prominent inventor based in Hangzhou, China. He has made significant contributions to the field of silicon wafer technology, particularly through his innovative patent related to internal gettering processes.

Latest Patents

Ze Xu holds a patent titled "Process of internal gettering for Czochralski silicon wafer." This invention outlines a method that involves heating a Czochralski silicon wafer to temperatures between 1200-1250°C under a nitrogen atmosphere. The process includes maintaining this temperature for 30-150 seconds, followed by a controlled cooling phase. The second step involves annealing the wafer at 800-900°C under an argon atmosphere for 8-16 hours. This method is notable for requiring lower temperatures and shorter processing times compared to conventional techniques, allowing for better control over the density of bulk microdefects.

Career Highlights

Ze Xu is affiliated with Zhejiang University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in improving the quality of silicon wafers used in various electronic devices.

Collaborations

Ze Xu has collaborated with notable colleagues, including Xiangyang Ma and Biao Wang, contributing to the advancement of research in his field.

Conclusion

Ze Xu's innovative approach to silicon wafer processing exemplifies the potential for advancements in semiconductor technology. His contributions are paving the way for more efficient manufacturing processes in the electronics industry.