Company Filing History:
1 out of 832,912 Years Active: 2013
Title: Innovations of Yun-Jui Hsieh
Introduction
Yun-Jui Hsieh is a notable inventor based in Gongguan, CN. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs in power MOSFET packages. His work has implications for various electronic applications, enhancing efficiency and performance.
Latest Patents
Yun-Jui Hsieh holds a patent for a power MOSFET package. This package includes a semiconductor substrate with opposite first and second surfaces, forming a drain region and a doped region that extends downward from the first surface. The design features a source region, a gate with a dielectric layer, and multiple conducting structures that connect the drain, source, and gate terminals. The terminals are substantially coplanar, and a protection layer is included between the semiconductor substrate and the terminals. This innovative design aims to improve the functionality and reliability of power MOSFETs in various applications.
Career Highlights
Throughout his career, Yun-Jui Hsieh has focused on advancing semiconductor technology. His patent reflects his commitment to innovation and his ability to address complex engineering challenges. His work has contributed to the development of more efficient electronic components, which are essential in modern technology.
Collaborations
Yun-Jui Hsieh has collaborated with notable colleagues, including Baw-Ching Perng and Ying-Nan Wen. These collaborations have fostered a creative environment that encourages the exchange of ideas and expertise, further enhancing the quality of their innovations.
Conclusion
Yun-Jui Hsieh's contributions to the field of semiconductor technology, particularly through his patented power MOSFET package, demonstrate his innovative spirit and dedication to advancing electronic components. His work continues to influence the industry and pave the way for future advancements.