Toyokawa, Japan

Yukio Shirota


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 55(Granted Patents)


Company Filing History:


Years Active: 1979

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1 patent (USPTO):Explore Patents

Title: Yukio Shirota: Innovator in Semiconductor Technology

Introduction

Yukio Shirota is a prominent inventor based in Toyokawa, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of insulated gate field effect transistors.

Latest Patents

Yukio Shirota holds a patent for an insulated gate field effect transistor with a source field shield. This invention involves a semiconductor substrate where the source and drain regions are of P-conductivity type, strategically positioned apart. The gate electrode is placed through an insulating film on the substrate, enhancing the transistor's performance. The design includes an intermediate region and a high resistance region, both of P-conductivity type, which improve the functionality of the device.

Career Highlights

Yukio Shirota is associated with Hitachi, Ltd., a leading company in technology and innovation. His work has been instrumental in advancing semiconductor devices, which are crucial for modern electronics.

Collaborations

He has collaborated with notable coworkers, including Takeaki Okabe and Isao Yoshida, contributing to various projects that enhance the capabilities of semiconductor technology.

Conclusion

Yukio Shirota's innovative work in the field of insulated gate field effect transistors showcases his expertise and commitment to advancing technology. His contributions continue to influence the semiconductor industry significantly.

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