Yuhui Yang

Title: Yuhui Yang: Innovator in GaN/AlN Heterojunction Rectifiers

Introduction

Yuhui Yang is a prominent inventor based in Guangzhou, China. She has made significant contributions to the field of rectifiers, particularly through her innovative work on GaN/two-dimensional AlN heterojunction rectifiers. Her research focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

Yuhui Yang holds a patent for a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate. This invention provides a novel preparation method for the rectifier, which consists of a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer, and a SiN passivation layer stacked in sequence. The design includes a mesa isolation groove and a Schottky contact electrode, which enhance the rectifier's performance. The two-dimensional AlN layer's thickness is only several atomic layers, allowing for greater stress and polarization intensity compared to traditional AlGaN layers. Yuhui Yang's patent is a testament to her innovative approach in the field.

Career Highlights

Yuhui Yang is affiliated with the South China University of Technology, where she continues to advance her research in semiconductor technology. Her work has garnered attention for its potential applications in various electronic devices, making her a key figure in her field.

Collaborations

Yuhui Yang has collaborated with notable colleagues, including Wenliang Wang and Guoqiang Li. These partnerships have contributed to her research and the development of her innovative technologies.

Conclusion

Yuhui Yang's contributions to the field of GaN/AlN heterojunction rectifiers highlight her role as an influential inventor. Her innovative patent and ongoing research at the South China University of Technology position her as a leader in semiconductor technology.