Company Filing History:
Years Active: 2024
Title: Yufeng Tian: Innovator in Magnetic Materials
Introduction
Yufeng Tian is a prominent inventor based in Jinan, China. He has made significant contributions to the field of magnetic materials, holding two patents that showcase his innovative approach to technology.
Latest Patents
His latest patents include a "Ferromagnetic Free Layer, Preparation Method and Application Thereof." This invention provides a ferromagnetic layer that consists of a magnetic film alloy with multiple layers of laminated films. The thickness of each film decreases gradually, breaking the in-plane structural symmetry of the magnetic film alloy. This design allows for the generation of spin orbit torque when a current is applied, driving the magnetic moment to undergo deterministic magnetization reversal.
Another notable patent is the "Magnetic Heterojunction Structure and Method for Controlling and Achieving Logic and Multiple-State Storage Functions." This invention describes a magnetic heterojunction structure that includes various layers, such as in-plane anti-ferromagnetic and ferromagnetic layers, as well as vertical layers. The structure is designed to achieve spin logic and multiple-state storage functions through the coupling of these layers.
Career Highlights
Yufeng Tian is affiliated with Shandong University, where he continues to advance research in magnetic materials. His work has garnered attention for its potential applications in data storage and logic devices.
Collaborations
He collaborates with notable colleagues, including Shishen Yan and Lihui Bai, contributing to a dynamic research environment that fosters innovation.
Conclusion
Yufeng Tian's contributions to the field of magnetic materials through his patents reflect his dedication to advancing technology. His work not only enhances our understanding of magnetic properties but also paves the way for future innovations in the industry.