Company Filing History:
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2 out of 832,843 Years Active: 2014
Title: Innovations by Yuanxing Li in Phase Change Memory Technology
Introduction
Yuanxing Li is an accomplished inventor based in Essex Junction, Vermont, known for his significant contributions to the field of phase change memory technology. With a total of three patents to his name, he has developed innovative systems and methods that enhance the efficiency of memory operations.
Latest Patents
Yuanxing Li's latest patents focus on systems, methods, and devices with write optimization in phase change memory. These patents detail methods and systems for phase change memories and arrays that exhibit improved write characteristics. One of the key innovations involves the ability to write data words more efficiently by exchanging SETs and RESETs on the fly. This process includes writing a bit of overhead to indicate the transformation, which has shown surprising synergy with phase change memory. Typically, SET operations consume more power and take longer than RESET operations. In certain embodiments of multilevel phase change memory, intermediate states between SET and RESET are less desirable to write, as they require more precision. Therefore, exchanging these intermediate states for extreme states can lead to more efficient memory operations.
Career Highlights
Throughout his career, Yuanxing Li has worked with various companies, including Being Advanced Memory Corporation. His work has significantly impacted the development of advanced memory technologies, particularly in optimizing write operations.
Collaborations
Yuanxing Li has collaborated with notable professionals in the field, including Van Butler and Ryan A Jurasek. These collaborations have contributed to the advancement of memory technology and the successful implementation of his innovative ideas.
Conclusion
Yuanxing Li's work in phase change memory technology exemplifies the importance of innovation in enhancing memory efficiency. His patents and collaborations reflect a commitment to advancing the field and improving the performance of memory systems.