Hsinchu Hsien, Taiwan

Yuan-Ming Liu

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovations by Yuan-Ming Liu

Introduction

Yuan-Ming Liu is an inventor based in Taichung City, Taiwan. He is known for his work in the field of semiconductor devices. Although he currently holds no granted patents, his contributions to the industry are noteworthy.

Latest Patent Applications

Yuan-Ming Liu has filed several patent applications, including a significant one titled "SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME." This application describes a semiconductor device that includes a substrate with an oxide semiconductor channel layer positioned above it. The gate structure of this device comprises an oxide semiconductor barrier layer, a gate dielectric layer, and a gate metal. Additionally, source/drain electrodes are designed to contact opposite ends of the oxide semiconductor channel layer.

Another application by Liu outlines a method for forming a semiconductor device. This method involves creating a stack of alternating oxide semiconductor channel layers and sacrificial layers over a substrate. The process includes removing portions of the sacrificial layers to expose channel regions, forming a gate structure around these regions, and subsequently exposing source/drain regions to form source/drain electrodes that wrap around and contact these regions.

Conclusion

Yuan-Ming Liu's innovative approaches in semiconductor technology highlight his potential impact on the field, despite not having any granted patents at this time. His latest patent applications reflect a commitment to advancing semiconductor device design and functionality.

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