Company Filing History:
Years Active: 2002-2003
Title: Innovations by Yuan-Hsin Tzou
Introduction
Yuan-Hsin Tzou is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding two patents that enhance the reliability and efficiency of semiconductor devices.
Latest Patents
His latest patents include a method for forming a semiconductor device having a metal substrate. This invention provides a method that includes providing at least one semiconductor substrate, forming at least one semiconductor layer on the substrate, and then forming a metal substrate on the semiconductor substrate before removing the semiconductor substrate. The metal substrate offers high thermal and electrical conductivity, which improves the reliability and lifetime of the semiconductor device. Another patent is for a method for forming a semiconductor device having a metallic substrate. This method involves providing a semiconductor substrate, forming at least one semiconductor layer on it, and then forming a metallic electrode layer on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer, and the semiconductor substrate is subsequently removed. This innovation also emphasizes the advantages of high thermal and electrical conductivity.
Career Highlights
Yuan-Hsin Tzou is associated with Uni Light Technology Inc., where he continues to develop innovative solutions in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.
Collaborations
He collaborates with talented individuals such as Nai-Chuan Chen and Bor-Jen Wu, contributing to a dynamic research environment that fosters innovation.
Conclusion
Yuan-Hsin Tzou's contributions to semiconductor technology through his patents reflect his commitment to enhancing device performance and reliability. His work continues to influence the field positively.