This inventor holds 1 USPTO granted patent. Top assignee: International Rectifier Corporation. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: The Innovations of Yuan-Heng Chao
Introduction
Yuan-Heng Chao is a notable inventor based in San Jose, California. He has made significant contributions to the field of power electronics, particularly through his innovative designs in insulated gate bipolar transistors (IGBTs). His work has been instrumental in advancing the efficiency and performance of electronic devices.
Latest Patents
Yuan-Heng Chao holds a patent for a "Variable threshold trench IGBT with offset emitter contacts." This invention features a trench type IGBT that includes multiple channel regions, each with distinct threshold voltages. This design allows for improved operational efficiency and adaptability in various applications.
Career Highlights
Chao is currently employed at International Rectifier Corporation, where he continues to develop cutting-edge technologies in power management. His expertise in IGBT technology has positioned him as a key player in the industry, contributing to advancements that benefit a wide range of electronic applications.
Collaborations
Chao has worked alongside his coworker, Chiu Ng, to further enhance the capabilities of their projects. Their collaboration has led to innovative solutions that address the challenges faced in power electronics.
Conclusion
Yuan-Heng Chao's contributions to the field of power electronics through his patent and work at International Rectifier Corporation highlight his role as a significant inventor. His innovative designs continue to influence the industry and pave the way for future advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile