Yu-Lung Mao

Title: Yu-Lung Mao: Innovator in Semiconductor Technology

Introduction

Yu-Lung Mao is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that addresses defect generation during the wet cleaning process of semiconductor substrates.

Latest Patents

Yu-Lung Mao holds a patent for a "Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean." This method involves several steps to prevent the formation of watermark defects. It includes forming a pad oxide, a silicon nitride layer, and a silicon oxynitride layer over a semiconductor substrate. A photoresist mask is then created over this structure, utilizing the silicon oxynitride layer as an anti-reflective coating during the exposure of the photoresist material. An etch is performed through the photoresist mask, forming a trench in the substrate. After stripping the photoresist mask, the silicon oxynitride layer is conditioned, potentially through a rapid thermal anneal in the presence of oxygen or nitrogen. Finally, a wet clean step is executed to remove a native oxide layer in the trench, with the conditioned silicon oxynitride layer effectively preventing watermark formation during this process.

Career Highlights

Yu-Lung Mao is currently employed at Integrated Device Technology, Inc., where he continues to advance semiconductor technologies. His work has been instrumental in improving the reliability and performance of semiconductor devices.

Collaborations

Yu-Lung has collaborated with esteemed colleagues such as Guo-Qiang Lo and Ohm-Guo Pan, contributing to a dynamic and innovative work environment.

Conclusion

Yu-Lung Mao's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and excellence in the field. His work not only enhances the manufacturing process but also sets a standard for future advancements in semiconductor technology.