Jiangsu, China

Yu Huang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Inventor Yu Huang

Introduction

Yu Huang is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of semiconductor technology and wastewater treatment. With a total of 2 patents, his work showcases innovative solutions to complex engineering challenges.

Latest Patents

One of Yu Huang's latest patents is a semiconductor device and manufacturing method. This invention includes a method for providing a substrate of a first conductivity type and forming doped regions of a second conductivity type. The method addresses the problem of morphological changes in photoresist due to high temperatures during the etching process, which can impair the high-energy ion implantation process.

Another notable patent is a two-stage cavitation generator for organic wastewater treatment. This device features a shrouded impeller, a stator, and a rotor. The design includes blades that create a throat structure, enhancing the efficiency of the wastewater treatment process.

Career Highlights

Yu Huang has worked with reputable organizations such as Jiangsu University and CSMC Technologies Fab2 Co., Ltd. His experience in these institutions has allowed him to develop and refine his innovative ideas in semiconductor technology and environmental engineering.

Collaborations

Throughout his career, Yu Huang has collaborated with talented individuals, including Yong Wang and Ming Li. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Yu Huang's contributions to semiconductor technology and wastewater treatment demonstrate his innovative spirit and commitment to solving real-world problems. His patents reflect a deep understanding of engineering principles and a dedication to improving technology for the benefit of society.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…