Ann Arbor, MI, United States of America

Younggap You


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: Younggap You - Innovator in Dynamic RAM Technology

Introduction

Younggap You is a notable inventor based in Ann Arbor, MI (US). He has made significant contributions to the field of dynamic random-access memory (DRAM) technology. His innovative approach has led to advancements that enhance the efficiency and reliability of memory systems.

Latest Patents

Younggap You holds a patent for a self-testing dynamic RAM. This invention focuses on very large dynamic RAM integrated circuits, which are rendered self-testing through the on-chip generation of data test patterns. The design ensures very high fault coverage and allows for concurrent testing of storage cell subarrays, ultimately reducing overall testing time. The test generator operates in conjunction with the refresh control and timing system of the RAM integrated circuit, supplying the initial data test pattern loaded into the storage arrays. Modifications to the conventional sense amplifier array, along with a gate control system, facilitate the shifting of data in each column of the storage subarrays. Additionally, the use of complementary data test patterns enables the detection of symmetrical faults within the storage arrays.

Career Highlights

Younggap You is affiliated with the University of Michigan, where he continues to contribute to research and development in memory technology. His work has garnered attention for its innovative solutions to common challenges in the field.

Collaborations

Younggap You has collaborated with John Patrick Hayes, a fellow researcher, to further explore advancements in memory technology.

Conclusion

Younggap You's contributions to dynamic RAM technology exemplify the impact of innovative thinking in the field of electronics. His patent for self-testing dynamic RAM represents a significant step forward in enhancing memory system efficiency and reliability.

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