Tokyo, Japan

Yoshio Kirino


Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 40(Granted Patents)


Location History:

  • Tokyo, JP (1991)
  • Kanagawa, JP (1999)

Company Filing History:


Years Active: 1991-1999

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2 patents (USPTO):Explore Patents

Title: Yoshio Kirino: Innovator in Silicon Wafer Technology

Introduction

Yoshio Kirino is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced silicon wafers. With a total of 2 patents, his work has had a notable impact on the industry.

Latest Patents

Kirino's latest patents include a method for making a slant-surface silicon wafer. This innovative technique involves slicing a single crystal silicon wafer to create a slant surface inclined from the (001) plane. The slant surface is treated in an ultrapure argon or hydrogen atmosphere to achieve a stepped crystal surface structure. His second patent focuses on a method and apparatus for measuring deep impurity levels in semiconductor specimens. This method utilizes a stage equipped with a heater and cooler to change the specimen's temperature while generating minority carriers through energy beam irradiation.

Career Highlights

Throughout his career, Yoshio Kirino has worked with notable companies such as Toshiba Ceramics Co., Ltd. and Semitex Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Kirino has collaborated with esteemed colleagues, including Lei Zhong and Norihiro Shimoi. These partnerships have further enriched his research and development efforts in the field.

Conclusion

Yoshio Kirino's contributions to silicon wafer technology and semiconductor measurement techniques highlight his role as an influential inventor. His innovative patents and collaborations reflect his commitment to advancing technology in this critical area.

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