Nanto, Japan

Yoshinori Imai


Average Co-Inventor Count = 2.9

ph-index = 3

Forward Citations = 19(Granted Patents)


Location History:

  • Toyama, JP (2013 - 2014)
  • Nanto, JP (2011 - 2015)

Company Filing History:


Years Active: 2011-2015

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8 patents (USPTO):Explore Patents

Title: Innovator Yoshinori Imai: Pioneering Advances in Semiconductor Technology

Introduction: Yoshinori Imai is an esteemed Japanese inventor based in Nanto, Japan, recognized for his significant contributions to the field of semiconductor technology. With a remarkable portfolio consisting of 8 patents, Imai’s innovations are at the forefront of enhancing semiconductor manufacturing processes.

Latest Patents: Among Yoshinori Imai’s latest patents are groundbreaking methods related to semiconductor device manufacturing and substrate processing. His inventions include a substrate processing apparatus designed for effective substrate treatment, which features a reaction chamber, multiple gas supply systems, and a control unit to optimize the manufacturing process. The methodology not only involves a unique gas supply technique for producing silicon carbide films but also innovatively integrates various gas flows to enhance efficiency in semiconductor device creation.

Career Highlights: Throughout his career, Imai has made significant strides in semiconductor manufacturing methods. His expertise lies in developing advanced techniques that streamline the manufacturing of substrates, ultimately leading to improved device performance. His dedication to innovation has positioned him as a leading figure in the semiconductor industry.

Collaborations: Imai’s advancements are further amplified by his collaborations with notable colleagues, such as Sadayoshi Horii and Takafumi Sasaki. Together, they form a powerful team within Hitachi Kokusai Electric Inc., fostering an environment where groundbreaking ideas and techniques can flourish.

Conclusion: Yoshinori Imai stands as a testament to the spirit of innovation in the semiconductor field. His patents and collaborative efforts continue to push the boundaries of technology, shaping the future of semiconductor devices and processes in profound ways.

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