Company Filing History:
Years Active: 2004
Title: The Innovations of Yoshikazu Ohira
Introduction
Yoshikazu Ohira is a notable inventor based in Ome, Japan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on dynamic random access memory (DRAM) and its manufacturing processes.
Latest Patents
Yoshikazu Ohira holds a patent for a dynamic random access memory with improved contact arrangements. This patent describes a semiconductor integrated circuit device and a manufacturing method that prevents undulations in polycrystal silicon plugs within bit line contact holes. It also addresses the issue of transversally etching silicide film at the contacts of the bit lines and polycrystal silicon plugs. The invention involves forming bit lines from a laminate film consisting of titanium, titanium nitride, and tungsten films. Additionally, a titanium silicide film containing nitrogen or oxygen is formed in the contact areas of the bit lines and plugs, as well as in the contact areas of the first wiring layer and semiconductor substrate.
Career Highlights
Yoshikazu Ohira is associated with Hitachi, Ltd., a leading company in the technology sector. His work at Hitachi has allowed him to contribute to advancements in semiconductor technology. His innovative approaches have garnered attention in the industry.
Collaborations
Yoshikazu Ohira has collaborated with notable colleagues such as Yoshitaka Nakamura and Hideo Aoki. These collaborations have further enhanced the development of innovative technologies in their field.
Conclusion
Yoshikazu Ohira's contributions to semiconductor technology, particularly in dynamic random access memory, highlight his role as an influential inventor. His patent reflects a commitment to improving manufacturing processes and addressing challenges in the industry. His work continues to impact the field of technology significantly.