Yoshihisa Shiotari

Title: The Innovations of Yoshihisa Shiotari

Introduction

Yoshihisa Shiotari is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work has been instrumental in advancing integrated circuit devices and CMOS technology.

Latest Patents

One of his latest patents is for a semiconductor integrated circuit device. This innovative one-chip IC device features multiple IC-chip equivalent regions that replicate the patterns and functions of previously evaluated and proven ICs. The device includes intra-region wiring layers and external lead contacts, which serve as bonding pads for the original ICs, in addition to outer bonding pads.

Another notable patent is for a CMOS device with a high-density wiring layout. This device incorporates P- and N-channel transistors that sandwich an isolation region on a semiconductor substrate. The drain and gate regions of both transistors are interconnected through wiring layers made of polycrystalline silicon. The design includes symmetrical electrical contacts and impurity diffusion regions that enhance the device's performance.

Career Highlights

Yoshihisa Shiotari has worked with several esteemed companies throughout his career. He has been associated with Tokyo Shibaura Denki Kabushiki Kaisha and Toshiba Corporation. His experience in these organizations has contributed to his expertise in semiconductor technologies.

Collaborations

Throughout his career, Shiotari has collaborated with notable colleagues, including Kenichi Nagao and Ichiro Kobayashi. These collaborations have further enriched his work and innovations in the field.

Conclusion

Yoshihisa Shiotari's contributions to semiconductor technology through his patents and collaborations highlight his significant role as an inventor. His innovative designs continue to influence the industry and pave the way for future advancements.